Gallium Compounds
Gallium Oxide
Gallium oxide (Ga₂O₃), also known as gallium (III) oxide or gallium sesquioxide, is an advanced wide-bandgap semiconductor material recognized for its potential to improve power electronics, optoelectronics, and high-frequency devices. A reliable, high-quality supply of this semiconductor is crucial, and with years of expertise in gallium, Indium Corporation is the preferred choice for customers seeking premium product quality and service.
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Features
4.8 eV
Ga2O3 is gaining attention as an ultra-wide bandgap (~ 4.8 eV) semiconductor in power electronics.
74.39%
74.39% is the theoretical gallium percentage in gallium oxide.
B-phase
Gallium oxide’s β-phase is the most stable and commonly used form, which is why it’s the primary structure in most commercial applications.
Gallium Oxide Products
Our gallium (III) oxide is a high-purity white powder primarily in the β-phase, confirmed by X-ray diffraction (XRD). This compound has a purity grade of 99.99% (4N) and is available in a variety of particle size distributions, catering to specific industry needs. It’s also packaged in PE bottles, plastic pails, or drums, depending on quantity requirements.
| Property | Germanium Tetrachloride |
|---|---|
| Appearance | White powder |
| Melting Point | 1900°C |
| Density (Material) | 6.44 g/cm³ |
| Density (Apparent) | 0.7 g/cm³ |
| Solubility | Soluble in strong alkalis and hot acids, insoluble in water |
| Theoretical Gallium Content | 74.39% |
Related Applications
Gallium Oxide is suitable for the below applications.
Chemical Synthesis
Indium and gallium compounds for chemical synthesis and materials
Related Markets
Gallium oxide plays a significant role in the semiconductor market, particularly in the production of Ga₂O₃ wafers through methods like edge-fed film growth (EFG) and czochralski (CZ). It is also crucial for manufacturing sputtering targets such as IGZO or GIZO, which are essential for next-gen displays requiring high currents and pixel densities. GIZO, with its superior properties, enables the deposition of high-mobility active channels in thin-film transistors on the display’s active-matrix backplane.
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